Metal source and drain mos transistor
AssigneeCommissariat a l'Energie Atomique
InventorSimon Deleonibus
Life of this patent
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Abstract
MOS transistor comprising: a channel region (120) made of a semiconducting material above which there is a grid structure, the grid structure comprising a grid (110) and insulating spacers (122) coating the sides of the grid, regions called source and drain extension regions (116a, 118a) located on each side of the channel, in direct contact with the semiconducting material of the channel, and arranged essentially under the grid structure, the extension regions being made of a non-insulating material, source and drain regions (146, 148) made of metal, in contact with source and drain extension regions respectively and extending partly under the grid structure. Application to manufacturing of integrated circuits.
Claims4
Field effect transistor, comprising:
- a channel re ion (120) made of a semiconducting material above which there is a sate structure (130), the gate structure comprising a gate electrode (110) and insulating spacers (122) coating the sides of the gate;
- electrode
- regions, called the source and drain extension regions (116a, 116b, 118a, 118b, 116c, 118c), located on each side of the channel in direct contact with the se conducting material of the channel, and extending at least partly under the gate electrode, the extension re ions being made of a non-insulating material,
- metallic source and drain electrodes (146, 148), in contact with the source and drain extension regions respectively, and extending at least partly under the gate structure.
Dependencies are inferred from the claim text.