Method for operating a stacked gate field effect transistor (FET) device

A method for operating a stacked gate field effect transistor device comprising:

• providing a stacked gate field effect transistor device comprising:
• a semiconductor substrate having an active region defined therein;
• a tunneling dielectric layer formed upon the active region of the semiconductor substrate;
• a floating gate electrode formed upon the tunneling dielectric layer;
• an inter-gate electrode dielectric layer formed upon the floating gate electrode;
• a control gate electrode formed upon the inter-gate electrode dielectric layer;
• and
• a pair of source/drain regions formed adjacent a pair of opposite edges of the floating gate electrode, wherein:
• the floating gate electrode is formed with a pointed edge tip at its outer sidewall;
• the floating gate electrode in formed with a pointed linear recess centered within its linewidth;
• the pair of source/drain regions is formed asymmetrically penetrating beneath the pair of opposite edges of the floating gate electrode and not laterally spaced from a floating gate electrode sidewall;
• and
• programming or erasing the stacked gate field effect transistor device through charge injection between the floating gate electrode and the control gate electrode.