Hetero-junction field effect transistor having an InGaAIN cap film
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKaoru Inoue, Yoshito Ikeda, Hiroyuki Masato
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Abstract
A semiconductor device includes an AlGaN film formed on a GaN film on a substrate, a gate electrode formed on the AlGaN film, and source and drain electrodes formed on either side of the gate electrode on the AlGaN film. An n-type InxGayAl1-x-yN film is interposed between the source and drain electrodes and the AlGaN film. Alternatively, the semiconductor device includes an n-type InxGayAl1-x-yN film formed on a GaN film on a substrate, a gate electrode formed on the InxGayAl1-x-yN film, and source and drain electrodes formed on either side of the gate electrode on the InxGayAl1-x-yN film.
Claims4
A semiconductor device, comprising:
- a GaN film formed on a substrate;
- an AlGaN film formed on the GaN film;
- a gate electrode formed on the AlGaN film;
- and
- source and drain electrodes formed on either side of the gate electrode on the AlGaN film;
- wherein an n-type InxGayAl1-x-yN cap film (wherein 0<x<1, 0<y<l, 0x+y<1) is formed between the source and drain electrodes and the AlGaN film.
A semiconductor device comprising:
- a GaN film formed on a substrate;
- an AlGaN film formed on the GaN film;
- a gate electrode formed on the AlGaN film;
- and
- source and drain electrodes formed on either side of the gate electrode on the AlGaN film;
- wherein an n-type InxGayAl1-x-yN film (wherein 0<x<1, 0<y<1, 0<x+y<1) is formed between the source and drain electrodes and the AlGaN film, and
- wherein the composition of the InxGayAl1-x-yN film is set so that the lattice constant of the InxGayAl1-x-yN film and the lattice constant of the GaN film are substantially matching, and polarization occurring in the InxGayAl1-x-yN film is equal to or larger than polarization occurring in the AlGaN film.
Dependencies are inferred from the claim text.