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US 6,787,816 B1Granted
Thyristor having one or more doped layers
AssigneeRensselaer Polytechnic Institute
InventorsTatsing P. Chow, Jeffrey B. Fedison
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Abstract
A method is provided for forming one or more doped layers using ion-implantation in the fabrication of thyristor devices. For example, these thyristors may be made from single crystalline silicon carbide. According to one aspect of the invention, one of the required layers is formed by introducing dopants after crystal growth as opposed to conventional methods which involve doping during crystal growth. Specifically, impurities may be introduced by using the technique of ion implantation.
Claims14
A method of forming at least one doped layer of a thyristor comprising:
- providing a semiconductor crystal of a single crystalline carbide material, the semiconductor crystal having a crystal structure and forming a gate turn-off thyristor device having a plurality of layers including a layer that forms an upper base of the thyristor device
- introducing impurities in the crystal structure to form the upper base layer after the crystal structure has been formed.
Dependencies are inferred from the claim text.