Manufacture method for semiconductor device having silicon-containing insulating film

A method of manufacturing a semiconductor device, comprising the steps of:

• preparing a semiconductor substrate having a metal wiring whose upper surface is exposed on a surface of the semiconductor substrate;
• forming an etching stopper film made of SiN or C on the surface of the semiconductor substrate;
• depositing an insulating film on the etching stopper film, the insulating film being made of a second insulating material which contains Si and has an etching resistance different from the etching stopper film;
• covering a surface of the insulating film with a resist pattern having an opening superposed upon the metal wiring;
• dry-etching the insulating film by using the mask pattern as a mask and etching gas which contains C4F8 gas and CxFy gas (wherein x and y are an integer and satisfy x≧5 and y≦(2x−1), to form a recess and expose the etching stopper film on a bottom of the recess;
• removing the resist pattern under a condition that the metal wiring is covered with the etching stopper film;
• removing the etching stopper film exposed at said dry-etching step to expose a part of the metal wiring;
• and
• burying conductive material in the recess etched by said dry-etching step to form a conductive member connected to the metal wiring,
• wherein an etching rate of the first insulating material is slower than an etching rate of the second insulating material when said dry-etching step is performed bythe etching gas.

A method of manufacturing a semiconductor device, comprising the steps of:

• preparing a semiconductor substrate having a metal wiring whose upper surface is exposed on a surface of the semiconductor substrate;
• forming an etching stopper film made of a first insulating material on the surface of the semiconductor substrate;
• depositing an insulating film on the etching stopper film, the insulating film being made of a second insulating material which contains Si and has an etching resistance different from the etching stopper film;
• covering a surface of the insulating film with a resist pattern having an opening superposed upon the metal wiring;
• dry-etching the insulating film by using the mask pattern as a mask and etching gas which contains C4F8 gas and CxFy gas (wherein x and y are an integer and satisfy x≧5 and y≦(2x−1), to form a recess and expose the etching stopper film on a bottom of the recess;
• removing the resist pattern under a condition that the metal wiring is covered with the etching stopper film;
• removing the etching stopper film exposed at said dry-etching step to expose a part of the metal wiring;
• and
• burying conductive material in the recess etched by said dry-etching step to form a conductive member connected to the metal wiring,
• wherein an etching rate of the first insulating material is slower than an etching rate of the second insulating material when said dry-etching step is performed by the etching gas,
• wherein the CxFy gas is C5F8 gas and said dry-etching step is performed under a condition of 0<P2/(P1+P2)≦0.5 where P1 is a partial pressure of the C4F8 gas and P2 is a partial pressure of the C5F8 gas.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a first film of SiN or SiC on an underlying layer formed with a copper wiring, a copper plug or a tungsten plug in a surface layer of the underlying layer;
• forming a second film made of insulating material on the first film;
• covering the second film with a mask pattern, and
• dry-etching the second film by using the mask pattern as a mask and etching gas which contains C4F8 gas and CxFy gas (wherein x and y are an integer and satisfy x≧5 and y≦(2x−1).

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a first film of SiN or SiC on an underlying layer formed with a copper wiring, a copper plug or a tungsten plug in a surface layer of the underlying layer;
• forming a second film made of insulating material on the first film;
• covering the second film with a mask pattern, and
• dry-etching the second film by using the mask pattern as a mask and etching gas which contains C4F8 gas and CxFy gas (wherein x and y are an integer and satisfy x≧5 and y≦(2x−1),
• wherein the CxFy gas is C5F8 gas and said dry-etching step is performed under a condition of 0<P2/(P1+P2)≦0.5 where P1 is a partial pressure of the C4F8 gas and P2 is a partial pressure of the C5F8 gas.