US 6,787,456 B1 · Wafer-level inter-connector formation method

Abstract

Inter-connectors are typically used for interconnecting electronic components. Interconnections between electronic components are generally classified into at least two broad categories of “relatively permanent” and “readily demountable”. A “readily demountable” connector includes a spring-like contact structure of one electronic component for connecting to a terminal of another electronic component. The spring-like contact structure, also known as an inter-connector, generally requires a certain amount of contact force to effect reliable pressure contact to a terminal of an electronic component. Therefore, the shape and metallurgy of the inter-connector are important factors in determining the effectiveness of the inter-connector for making pressure connection to a terminal of the electronic component. Conventional methods of making such an inter-connector use lithographic and planarisation methods to “make” the inter-connectors in segments. This results in the inter-connector segments having joints therebetween. Metallurgically, the joint stress due to joining a pair of inter-connector segments and stress concentration at the joints due forces applied to the inter-connector can lead to the mechanical failure of the inter-connector in Mathieu. An embodiment of the invention uses lithographic techniques and heat treatment methods for forming a structure channel defining the shape and dimension of an inter-connector. The structure channel is then used to “mold” a reproduction of the inter-connector having a single continuous physical segment.

Claims29

Dependent claims

An inter-connector formation method for forming an inter-connector for use as an electro-mechanical connector, the inter-connector formation method comprising the steps of:

forming a first passage in a first sacrificial layer of a first sacrificial material, the first sacrificial layer being formed over a portion of a substrate, the first passage extending from a signal terminal to an opening in the first sacrificial layer, and the signal terminal being formed on the substrate;
forming a protrusion over the opening in the first sacrificial layer, the protrusion being of a second sacrificial material and the second sacrificial material further extending from the protrusion to the signal terminal;
forming a second passage in a second sacrificial layer of the first sacrificial material, the second sacrificial layer being formed over a portion of the first sacrificial layer and the protrusion, the second passage extending from the protrusion to an opening in the second sacrificial layer;
removing the second sacrificial material to thereby remove the protrusion and to expose a structure channel extending from the signal terminal to the opening in the second sacrificial layer, and the structure channel defining the shape and dimension of the inter-connector;
and
depositing a structure material into the opening of the second sacrificial layer and thereby filling the structure channel therewith, the structure material taking the shape and dimension of the structure channel to form the inter-connector extending from the signal terminal to the opening in the second sacrificial layer.

3 more elements

An inter-connector formation system for forming an inter-connector for use as an electro-mechanical connector, the inter-connector formation system comprising:

means for forming a first passage in a first sacrificial layer of a first sacrificial material, the first sacrificial layer being formed over a portion of a substrate, the first passage extending from a signal terminal to an opening in the first sacrificial layer, and the signal terminal being formed on the substrate;
means for forming a protrusion over the opening in the first sacrificial layer, the protrusion being of a second sacrificial material and the second sacrificial material ether extending from the protrusion to the signal terminal;
means for forming a second passage in a second sacrificial layer of the first sacrificial material, the second sacrificial layer being formed over a portion of the first sacrificial layer and the protrusion, the second passage extending from the protrusion to an opening in the second sacrificial layer;
means for removing the second sacrificial material to thereby remove the protrusion and to expose a structure channel extending from the signal terminal to the opening in the second sacrificial layer, and the structure channel defining the shape and dimension of the inter-connector;
and
means for depositing a structure material into the opening of the second sacrificial layer and thereby filling the structure channel therewith, the structure material taking the shape and dimension of the structure channel to form the inter-connector extending from the signal terminal to the opening in the second sacrificial layer.

3 more elements

Dependencies are inferred from the claim text.

Wafer-level inter-connector formation method

Life of this patent

Wafer-level inter-connector formation method

Life of this patent

Abstract

Claims29