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US 6,787,445 B1Granted
Method for fabricating semiconductor device
AssigneeMatsushita Electric Industry Co., Ltd.
InventorsNobuhiro Jiwari, Shinichi Imai
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Abstract
A fluorine-containing organic film is deposited on a semiconductor substrate using a material gas containing fluorocarbon as a main component in a reactor chamber of a plasma processing apparatus. The fluorine-containing organic film is then exposed to plasma of a rare gas in the same reactor chamber to densify the fluorine-containing organic film.
Claims7
A method for fabricating a semiconductor device, comprising the steps of:
- depositing a fluorine-containing organic film on a semiconductor substrate using a material gas containing fluorocarbon as a main component in a reactor chamber of a plasma processing apparatus;
- after the depositing step, directly introducing a rare gas including no fluorocarbon into the reactor chamber, in which the semiconductor substrate is provided, to generate a plasma of the rare gas in the reactor chamber;
- and
- densifying the fluorine-containing organic film by directly exposing the fluorine-containing organic film to the plasma thereby heating the fluorine-containing organic film in the same reactor chamber,
- wherein the fluorocarbon is C5 F8, C3 F6, or C4F6.
2 more elements
A method for fabricating a semiconductor device comprising the steps of:
- forming a mask pattern made of a resist film or an insulating film on a metal film deposited on a semiconductor substrate;
- dry-etching the metal film using the mask pattern to form a plurality of metal interconnections made of the metal film;
- depositing an interlayer insulating film made of a fluorine-containing organic film between the plurality of metal interconnections and on top surfaces of the metal interconnections using a material gas containing fluorocarbon as a main component in a reactor chamber of a plasma processing apparatus;
- and
- after the depositing step, directly introducing a rare gas including no fluorocarbon into the reactor chamber, in which the semiconductor substrate is provided, to generate a plasma of the rare gas in the reactor chamber;
- and
- densifying the fluorine-containing organic film by directly exposing the fluorine-containing organic film to the plasma thereby heating the fluorine-containing organic film in the same reactor chamber,
- wherein the fluorocarbon is C5F8, C3F6, or C4F6.
5 more elements
Dependencies are inferred from the claim text.