Semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorShigeru Nagatomo
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate and an internal circuitry which is formed on the semiconductor substrate and which executes a predetermined operation. The device also includes a terminal which is connected to the internal circuitry and which receives an external signal and a protection circuitry which is formed on the semiconductor substrate. The protection circuitry includes a transistor having a first region of a first conductivity type, a second region of the first conductivity type and a third region of a second conductivity type. The first region is connected to the terminal. The second region is provided at a scribe line of the semiconductor substrate. The third region is defined by a region between the first region and the second region.
Claims4
A method of fabricating a semiconductor device having a semiconductor substrate, the method comprising:
- forming an internal circuitry on said semiconductor substrate, the internal circuitry executing a predetermined operation;
- forming a terminal on said semiconductor substrate, the terminal being connected to the internal circuitry and receiving an external signal;
- forming a protection circuitry on said semiconductor substrate, wherein the protection circuitry includes a transistor which has a first region of a first conductivity type, a second region of the first conductivity type and a third region of a second conductivity type, wherein the first region is connected to the terminal, wherein the second region is provided at a scribe line of said semiconductor substrate and wherein the third region is defined by a region between the first region and the second region;
- and
- protecting the internal circuitry from a surge voltage occurred at the terminal by using the transistor.
Dependencies are inferred from the claim text.