Method of forming a weak ferroelectric transistor

A method of forming a field effect transistor, comprising:

• forming a gate insulator layer overlying a substrate;
• forming a ferroelectric layer overlying the gate insulator layer without a programming conductor interposed between the ferroelectric layer and the gate insulator layer, wherein the ferroelectric layer comprising a weak ferroelectric material having a spontaneous polarization in the range of approximately 0.01 μCoulomb/cm2 approximately 1 μCoulomb/cm2 and wherein the gate insulator layer and the ferroelectric layer each have a thickness and wherein the thickness of the ferroelectric layer is at least 10 times the thickness of the gate insulator layer;
• forming an upper conductor layer overlying the ferroelectric layer;
• patterning the gate insulator layer, the ferroelectric layer and the upper conductor layer to define a gate stack structure having sidewalls;
• forming spacers on the sidewalls of the gate stack structure;
• and
• forming source and drain regions in the substrate.

A method of forming a field effect transistor, comprising:

• forming a gate insulator layer overlying a substrate;
• and
• forming a ferroelectric layer over the gate insulator layer, wherein the ferroelectric layer comprises a doped zinc oxide material having a general formula of ZnxLi1−xO where x ranges from approximately 0.70 to approximately 0.99,
• wherein the gate insulator layer and the ferroelectric layer each have a thickness and wherein the thickness of the ferroelectric layer is greater than the thickness of the gate insulator layer.

A method of forming a field effect transistor, comprising:

• forming a gate insulator layer overlying a substrate;
• and
• forming a ferroelectric layer overlying the gate insulator layer and without a programming conductor interposed between the ferroelectric layer and the gate insulator layer, wherein the ferroelectric layer comprises a doped zinc oxide material having a general formula of ZnxLi1−xO where x ranges from approximately 0.70 to approximately 0.99,
• wherein the gate insulator layer and the ferroelectric layer each have a thickness and wherein the thickness of the ferroelectric layer is greater than the thickness of the gate insulator layer.

A method of forming a field effect transistor, comprising:

• forming a gate insulator layer overlying a substrate;
• and
• forming a ferroelectric layer overlying and adjacent the gate insulator layer, wherein the ferroelectric layer comprises a doped zinc oxide material having a general formula of ZnxMg1−xO where x ranges from approximately 0.70 to approximately 0.99,
• wherein the gate insulator layer and the ferroelectric layer each have a thickness and wherein the thickness of the ferroelectric layer is greater than the thickness of the gate insulator layer.

A method of forming a field effect transistor, comprising:

• forming a gate insulator layer overlying a substrate;
• and
• forming a ferroelectric layer over the gate insulator layer and without a programming conductor interposed between the ferroelectric layer and the gate insulator layer, wherein the ferroelectric layer comprises a doped zinc oxide material having a general formula of ZnxMg1−xO where x ranges from approximately 0.70 to approximately 0.99,
• wherein the gate insulator layer and the ferroelectric layer each have a thickness and wherein the thickness of the ferroelectric layer is greater than the thickness of the gate insulator layer.

A method of forming a field effect transistor, comprising:

• forming a gate insulator layer overlying a substrate;
• and
• forming a ferroelectric layer overlying the gate insulator layer, wherein the ferroelectric layer comprises a doped zinc oxide material having a general formula of Znx(LiyMgz)O where x ranges from approximately 0.70 to approximately 0.99, y and z each independently range from approximately 0.00 to approximately 0.30 and the sum of y+z ranges from approximately 0.01 to approximately 0.30,
• wherein the gate insulator layer and the ferroelectric layer each have a thickness and wherein the thickness of the ferroelectric layer is greater than the thickness of the gate insulator layer.

A method of forming a field effect transistor, comprising:

• forming a gate insulator layer overlying a substrate;
• forming a ferroelectric layer overlying the gate insulator layer, wherein the ferroelectric layer comprises a doped zinc oxide material having a general formula of Znx(LiyMgz)O where x ranges from approximately 0.70 to approximately 0.99, y and z each independently range from approximately 0.00 to approximately 0.30 and due sum of y+z ranges from approximately 0.01 to approximately 0.30,
• wherein the gate insulator layer and the ferroelectric layer each have a thickness and wherein the thickness of the ferroelectric layer is greater than the thickness of the gate insulator layer;
• forming a source region in the substrate;
• forming a drain region in the substrate and separated from the source region by a channel region;
• and
• forming an upper conductor layer overlying the ferroelectric layer.

A method of forming a field effect transistor comprising:

• forming a gate insulator layer overlying a substrate;
• and
• forming a ferroelectric layer overlying the gate insulator layer and without a programming conductor interposed between the ferroelectric layer and the gate insulator layer, wherein the ferroelectric layer comprises a doped zinc oxide material having a general formula of Znx(LiyMgz)O where x ranges from approximately 0.70 to approximately 0.99, y and z each independently range from approximately 0.00 to approximately 0.30 and the sum of y+z ranges from approximately 0.01 to approximately 0.30;
• and
• forming an upper conductor layer overlying the ferroelectric layer,
• wherein the gate insulator layer and the ferroelectric layer each have a thickness and wherein the thickness of the ferroelectric layer is at least 5 times greater than the thickness of the gate insulator layer.