Method of controlled chemical vapor deposition of a metal oxide ceramic layer

A method of forming a bismuth oxide ceramic layer on a substrate by chemical vapor deposition, comprising:

• conducting a gaseous flow of an oxygen-containing inert carrier gas comprising about 40-80% oxygen and a vaporized solution of a mixture of precursor organo metal compounds comprising a precursor triorgano bismuth compound, a precursor diorgano strontium compound and precursor pentaorgano tantalum compound in a volatile organic solvent, in the presence of a protonating additive substance in gaseous state selected from the group consisting of water, a volatile carboxylic acid compound, a volatile ketone, a volatile amine, ammonia, and compatible mixtures thereof, into contact with a surface portion of the substrate under a vacuum pressure of about 0.1-100 Torr at a thermal decomposition temperature of about 150-800° C. for converting the triorgano bismuth compound to bismuth trioxide, the diorgano strontium compound to strontium monoxide and the pentaorgano tantalum compound to tantalum pentoxide;
• the additive substance being present in an amount sufficient for facilitating the thermal decomposition of the triorgano bismuth compound, the diorgano strontium compound and the pentaorgano tantalum compound and for controlling the in situ oxidation state of the corresponding deposited metal and the amount of oxygen in the formed layer, while suppressing the formation of volatile intermediates and of vacancies in the formed layer.

A method of forming a bismuth oxide ceramic layer on a substrate by chemical vapor deposition, comprising:

• conducting a gaseous flow of an oxygen-containing inert carrier gas comprising about 40-80% oxygen and a vaporized solution of a mixture of precursor organo metal compounds comprising bismuth tris-2,2,6,6-tetramethyl heptane-3,5-dionate or bismuth triphenyl, plus strontium bis-2,2,6,6-tetramethyl heptane-3,5-dionate and tantalum 2,2,6,6-tetramethyl heptane-3,5-dionate tetra isopropoxide in a volatile organic solvent comprising tetrahydrofuran/isopropyl alcohol/tetraglyme in a molar ratio of 8:2:1 or octane/decane/pentamethyl diethylene triamine in a molar ratio of 5:4:1, in the presence of a protonating additive substance in gaseous state selected from the group consisting of water, a volatile carboxylic acid compound, a volatile ketone, a volatile amine, ammonia, and compatible mixtures thereof, into contact with a surface portion of the substrate under a vacuum pressure of about 0.1-100 Torr at a thermal decomposition temperature of about 150-800° C. for converting the bismuth tris-2,2,6,6-tetramethyl heptane-3,5-dionate or bismuth triphenyl to bismuth trioxide, the strontium bis-2,2,6,6-tetramethyl heptane-3,5-dionate to strontium monoxide and the tantalum 2,2,6,6-tetramethyl heptane-3,5-dionate tetra isopropoxide to tantalum pentoxide;
• the additive substance being present in an amount of about 0.01-200 mols per inol of each of the corresponding bismuth tris-2,2,6,6-tetramethyl heptane-3,5-dionate or bismuth triphenyl, strontium bis-2,2,6,6-tetramethyl heptane-3,5-dionate and tantalum 2,2,6,6-tetramethyl heptane-3,5-dionate tetra isopropoxide, for facilitating the thermal decomposition of the precursor organo compounds and for controlling the in situ oxidation state of the corresponding deposited metal and the amount of oxygen in the formed layer, while suppressing the formation of volatile intermediates and of vacancies in the formed layer.