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US 6,784,519 B2Granted
Semiconductor device
AssigneeNokia Mobile Phones Ltd.
InventorsTakashi Iwamoto, Makoto Yoshimura, Kenichi Hashizume
Life of this patent
Estimating the term…
Abstract
A semiconductor device equipped with a buried type capacitor directly buried inside a semiconductor substrate, wherein three-dimensional cavities 11 each having an aperture on the front side of the flat semiconductor substrate 10 are formed aligned with each other on the substrate 10, a capacitor part A is provided by implementing a capacitor structure of a substrate-buried type inside the cavity 11, and semiconductor base bodies 101 including capacitor parts A, is provided.
Claims19
A semiconductor device, comprising:
- a semiconductor base body including a capacitor part, the capacitor part being buried in a planar semiconductor substrate in a three-dimensional cavity therein, the cavity extending through the substrate by penetrating from a front surface to a back side of the substrate, an insulating layer formed on the front surface and on the inner surface of the cavity, a laminate structure comprising a first electrode layer, a dielectric layer, and a second electrode layer formed inside of the cavity, each layer being a film, the first electrode layer being exposed from the back side surface of the substrate, and the capacitor part including a concave portion on the front surface of the substrate.
Dependencies are inferred from the claim text.