Integrated circuit device comprising an inductor with high quality coefficient
AssigneeFrance Telecom
InventorsGérard Merckel, Michel Pons, Patrice Senn, Jean Michel Fournier
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Abstract
The integrated circuit comprises an inductor made at a metallization level of the circuit and a buried layer situated in the substrate of the integrated circuit under the said inductor, and connection means linking the inductor to the buried layer. The connection means are configured in such a way as to ensure the same potential in terms of dynamic response between the inductor and the buried layer. This equipotential is ensured by a transistor in a follower type arrangement made in the substrate and connected in parallel with the stray capacitances under the inductor.
Claims9
Integrated circuit, comprising an inductor made at a metallization level of the circuit, a buried layer situated in a substrate of the integrated circuit under the inductor, and a connector linking the inductor to the buried layer, wherein the connector comprises a transistor biased in an emitter follower mode made in the substrate so as to ensure the same potential in terms of dynamic response between the inductor and the buried layer.
An integrated circuit, comprising:
- a substrate;
- a buried layer formed in the substrate;
- and
- an inductor formed above the buried layer, wherein the inductor is linked to the buried layer by a connector, wherein the connector comprises a transistor implanted in the substrate, and wherein the transistor is connected in an emitter follower mode between the inductor and the buried layer.
Dependencies are inferred from the claim text.