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US 6,784,482 B2Granted
Nonvolatile semiconductor memory device comprising high concentration diffused region
AssigneeOki Electric Industry Co., Ltd.
InventorKatsutoshi Saeki
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Abstract
The nonvolatile semiconductor memory device includes a first conductivity-type semiconductor substrate where an active region is created, a floating gate which is formed on the first conductivity-type semiconductor substrate, and a control gate which is formed on the floating gate. A first conductivity-type high concentration diffused region is formed in the non-overlapping region of the floating gate in the active region.
Claims10
A nonvolatile semiconductor memory device, comprising:
- a first conductivity-type semiconductor substrate where an active region is created;
- a floating gate which is formed over said active region;
- and
- a control gate which is formed over said floating gate,
- the active region including a first conductivity-type diffused region of a first impurity concentration formed where said floating gate overlaps above the active region, and a first conductivity-type high concentration diffused region of a second impurity concentration that is greater than the first impurity concentration formed where said floating gate does not overlap above the active region.
2 more elements
A nonvolatile semiconductor memory device, comprising:
- a first conductivity-type semiconductor substrate;
- a field insulation film which is formed on said first conductivity-type semiconductor substrate;
- a first conductivity-type diffused region which is formed in an active region surrounded by said field insulation film;
- a first conductivity-type high concentration diffused region which is formed at a location adjacent to said first conductivity-type diffused region in said active region surrounded by the field insulation film;
- a gate insulation film which is formed on said first conductivity-type diffused region and said first conductivity-type high concentration diffused region;
- a floating gate which is formed stretching from a region above said gate insulation film, corresponding to a region above said first conductivity-type diffused region, to said field insulation film;
- an IPO film which is formed on said field insulation film, said floating gate and said gate insulation film;
- a control gate which is formed on said IPO film;
- and
- a second conductivity-type diffused region which is formed in the active region where said floating gate and said control gate do not exist.
7 more elements
Dependencies are inferred from the claim text.