Flash memory device with isolation regions and a charge storage dielectric layer formed only on an active region
AssigneeSamsung Electronics Co., Ltd.
InventorsYou-Cheol Shin, Jong-Woo Park, Jung-Dal Choi
Life of this patent
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Abstract
A flash memory having a charge-storage dielectric layer. According to one embodiment, charge-storage dielectric layers are formed over the first and second active regions. The charge-storage layer over the first active region is not connected to the charge-storage layer over the second active region. A gate line overlies the charge-storage layer and extends across the first and second active regions and the isolation region. The charge-storage layer can be formed only where a gate line intersects an active region of a semiconductor substrate, not on an isolation region. Thus, undesirable influence or disturbance from adjacent memory cells can be avoided.
Claims9
A flash memory device comprising:
- adjacent isolation regions formed on a semiconductor substrate, the adjacent isolation regions defining an active region therebetween;
- a charge-storage dielectric layer formed only on the active region;
- a gate line overlying the charge-storage layer, the gate line intersecting the adjacent isolation regions and the active region;
- an impurity region formed on the active regions on both sides of the gate lines but not under the gate lines.
A flash memory device comprising:
- a semiconductor substrate having first and second active regions, and an isolation region formed therebetween;
- charge-storage dielectric layers formed over the first and second active regions,
- wherein the charge-storage dielectric layer over the first active region is not connected to the charge-storage layer over the second active region;
- a gate line overlying the charge-storage layers, the gate line extending across the first and second active regions and the isolation region;
- and
- an impurity region formed on the active regions on both sides of the gate lines but not under the gate lines.
Dependencies are inferred from the claim text.