Multi-layer integrated circuit capacitor electrodes
AssigneeSamsung Electronics Co., Ltd.
InventorJe-min Park
Life of this patent
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AssigneeSamsung Electronics Co., Ltd.
InventorJe-min Park
Estimating the term…
Integrated circuit capacitor electrodes include a first conductive ring on a face of an integrated circuit substrate. A second conductive ring is provided on the first conductive ring opposite the substrate. A third conductive ring also is provided on the first conductive ring opposite the substrate. The third ring is located at least partially within the second ring. A conductive layer electrically connects the first, second and third rings. To form the electrodes, a first conductive layer is conformally deposited in the areas in which the electrodes will be formed and on a mold oxide layer. A first buffer dielectric layer is deposited on the first conductive layer. The first buffer dielectric layer and the first conductive layer are etched to separate nodes of the first conductive layer. Recessed portions are formed by further etching the first conductive layer. The mold oxide layer and the first buffer dielectric layer deposited beside the recessed portions are etched to define areas in which the upper storage electrodes of dual cylindrical type are formed. A second conductive layer is conformally deposited in the areas in which the upper storage electrodes are formed and on the mold oxide layer and the buffer dielectric layer.
A semiconductor memory device comprising bilayered capacitor lower electrodes including lower storage electrodes, which comprise single cylindrical type electrodes including first bottoms and single sidewalls, and upper storage electrodes, which comprise dual cylindrical type electrodes including second bottoms and first and second sidewalls having different sizes, wherein the first sidewalls are positioned outside the sidewalls of the lower storage electrodes, the second sidewalls are positioned inside the sidewalls of the lower storage electrodes, and the second bottoms are positioned on the sidewalls of the lower storage electrodes and extend between lower edges of the first sidewalls and lower edges of the second sidewall, but not inside of the lower edges of the second sidewalls.
An integrated circuit capacitor electrode comprising:
An integrated circuit capacitor electrode comprising:
An integrated circuit capacitor electrode comprising:
Dependencies are inferred from the claim text.