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US 6,784,476 B2Granted
Semiconductor device having a flash memory cell and fabrication method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsDong-Jun Kim, Jin-Ho Kim, Yong-Kyu Lee, Min-Soo Cho, Eui-Youl Ryu
Life of this patent
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Abstract
In a non-volatile semiconductor memory device and a fabrication method thereof, a charge storage layer is formed on a substrate. A control gate layer is formed on the charge storage layer. A gate mask having a spacer-shape is formed on the control gate layer. The charge storage layer and the control gate layer are removed using the gate mask as protection to form a control gate and a charge storage region.
Claims15
A non-volatile semiconductor memory device comprising:
- a substrate;
- a charge storage region on the substrate;
- a conductive region formed in a top portion of the substrate adjacent a sidewall of the charge storage region;
- a control gale on the charge storage region;
- a source electrode on the conductive region, wherein the source electrode is electrically isolated from the control gate by a source-side insulative spacer;
- and
- a gate mask on the control gate, wherein the gate mask is in the shape of a spacer, the gate mask having a width that is substantially equal to a width of the underlying charge storage region and a width of the control gate, wherein the source electrode is of a height that is equal to or lower than a top of the gate mask.
4 more elements
A non-volatile semiconductor memory device comprising:
- a substrate having a source and a drain;
- a channel between the source and the drain;
- a charge storage region over the channel;
- a control gate over the charge storage region;
- a gate mask on an entire top surface of the control gate and being in the shape of a spacer, the gate mask having a width that is substantially equal to a width of the underlying charge storage region and a width of the control gate;
- and
- a select gate on the channel and between the charge storage region and the drain;
- the charge storage region, the channel, the drain, the control gate and the select gate forming a first unit cell.
5 more elements
Dependencies are inferred from the claim text.