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US 6,784,106 B2Granted
Wafer drying method
AssigneeDNS Korea Co., Ltd.
InventorsJeong-Yong Bae, Chang-Ro Yoon, Pyeng-Jae Park
Life of this patent
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Abstract
A method for drying a semiconductor substrate includes the steps of clearing the substrate by supplying a liquid into a processing bath of a chamber, injecting first dry gases onto a surface of the supplied liquid, draining the liquid from the processing bath so that the substrate is slowly exposed to the surface of the liquid, and injecting a second dry gas into the chamber and forcibly exhausting gas in the chamber.
Claims16
A method for drying a semiconductor substrate, comprising the steps of:
- clearing the substrate by supplying a liquid into a processing bath of a chamber;
- decompressing an inside of the chamber;
- draining the liquid from the processing bath and injecting a first dry gas onto a surface of the liquid in the processing bath;
- and
- injecting a second dry gas onto the substrate after the liquid is completely drained therefrom.
2 more elements
A method of drying a semiconductor substrate, comprising the steps of:
- clearing the substrate by supplying a liquid into a processing bath of a chamber;
- injecting first dry gases onto a surface of the liquid supplied into the processing bath;
- draining the liquid from the processing bath so that the substrate is slowly exposed to the surface of the liquid;
- and
- injecting a second dry gas into the chamber and forcibly exhausting the gas in the chamber.
2 more elements
Dependencies are inferred from the claim text.