Phosphine treatment of low dielectric constant materials in semiconductor device manufacturing
AssigneeAdvanced Micro Devices, Inc.
InventorsSuzette K. Pangrle, Minh Van Ngo, Dawn Hopper, Lu You
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Abstract
Improved dielectric layers are formed by surface treating the dielectric layer with a phosphine plasma prior to forming a barrier layer thereon. Embodiments include forming a trench in a low k dielectric layer and modifying the side surfaces of the trench by subjecting the dielectric to a phosphine plasma produced in PECVD chamber. A conductive feature is formed by depositing a conformal barrier layer on the low k dielectric including the treated side surfaces of the dielectric and depositing a copper containing layer within the trench.
Claims14
A method of forming a composite dielectric on a semiconductor substrate, the method comprising:
- forming a low k dielectric layer having an exposed surface on the substrate;
- treating the exposed surface of the dielectric layer with phosphine and/or a phosphine plasma;
- and
- forming a cap layer directly on the treated surface of the dielectric layer, wherein the cap layer is a dielectric and formed in-situ after treating the exposed surface of the dielectric layer.
Dependencies are inferred from the claim text.