Back to results
US 6,784,083 B1Granted
Method for reducing physisorption during atomic layer deposition
AssigneeMicron Technology, Inc.
InventorsF. Dan Gealy, Cem Basceri
Life of this patent
Estimating the term…
Abstract
The present invention provides a method and apparatus for an atomic layer deposition process. The apparatus includes a chamber adapted to receive a first precursor gas, at least one surface interior to the chamber, and an acoustic wave driver coupled to the at least one surface and adapted to drive acoustic waves along the interior surface.
Claims25
A method, comprising:
- providing a surface acoustic wave to at least one surface in a chamber, the surface acoustic wave having a frequency range selected to reduce adsorption of a first precursor gas onto the at least one surface;
- providing the first precursor gas to the chamber concurrent with providing the surface acoustic wave;
- and
- removing a portion of the first precursor gas from the chamber.
1 more element
A method for performing an atomic layer deposition process, comprising:
- introducing a workpiece in a chamber;
- providing a surface acoustic wave to at least one interior surface in the chamber, the surface acoustic wave having frequency range selected to reduce adsorption of a first precursor gas onto the at least one surface;
- and
- introducing the first precursor gas into the chamber.
1 more element
Dependencies are inferred from the claim text.