Method of making semiconductor-on-insulator device with thermoelectric cooler
AssigneeAdvanced Micro Devices, Inc.
InventorPhilip A. Fisher
Life of this patent
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Abstract
A semiconductor-on-insulator (SOI) device includes a thermoelectric cooler on a back side of the device. The thermoelectric cooler is formed on a thinned portion of a deep bulk semiconductor layer of the SOI device. The thermoelectric device includes a plurality of pairs of opposite conductivity semiconductor material blocks formed on a metal layer deposited on the thinned portion. The thinning of the thinned portion may be accomplished in multiple etching steps of the deep silicon layer, such as a fast etching down to an etch stop and a slower, more controlled etch to the desired thickness for the thinned portion.
Claims19
A method of making a semiconductor device, comprising:
- providing a semiconductor-on-insulator (SOI) wafer having a surface semiconductor layer and a bulk semiconductor layer with a buried insulator layer therebetween;
- thinning at least a portion of the bulk semiconductor layer of the SOI wafer, thereby producing a thinned portion of the bulk semiconductor layer;
- and
- forming a thermoelectric cooler on a back side of the thinned portion of the bulk semiconductor layer.
Dependencies are inferred from the claim text.