Bonded SOI wafer with <100> device layer and <110> substrate for performance improvement

A method for creating a silicon-on-insulation substrate, comprising the steps of:

• providing a first silicon substrate, said first silicon substrate having a <100> crystal orientation, said first substrate having a first and a second surface, further having a first wafer notch;
• providing a second silicon substrate, said second silicon substrate having a <110> crystal orientation, said second substrate having a first and a second surface, further having a second wafer notch;
• polishing the first surface of the first substrate and the second surface of the second substrate;
• making the polished second surface of the second substrate hydrophilic by depositing a layer of hydrogen based material over the second surface of said second substrate;
• positioning said first substrate in alignment with said second substrate above the second substrate, the first surface of the first substrate facing the second surface of the second substrate, said first alignment notch of said first substrate being aligned with said second alignment notch of said second substrate;
• contacting the first surface of said first substrate with the surface of said layer of hydrogen based material deposited over the second surface of said second substrate;
• and
• bonding the first surface of said first substrate with the second surface of said second substrate by applying conditions of bonding to the first and the second substrate.