Method for fabricating high voltage and low voltage transistors
AssigneeHynix Semiconductor Inc.
InventorDoo Yeol Ryoo
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Abstract
Disclosed are a transistor in the semiconductor device and method of fabricating the same. A gate oxide film is formed using a nitrification oxide film in a low voltage device region and a gate oxide film is formed to have a stack structure of a nitrification oxide film/oxide film/nitrification oxide film in a high voltage device region. An electrical thickness by an increased dielectric constant could be reduced even when a physical thickness of the gate oxide film is increased. The leakage current and diffusion and infiltration of a dopant into the gate oxide film or the channel region could be prevented. Furthermore, an electrical characteristic of the device could be improved by reducing the leakage current.
Claims8
A method of fabricating a transistor in a semiconductor device, comprising the steps of:
- simultaneously growing a first nitrification oxide film on the entire structure of a semiconductor substrate in which a low voltage device region and a high voltage device region are defined and a first oxide film on the first nitrification oxide film;
- forming a second oxide film below the first nitrification oxide film;
- removing the first oxide film, the first nitrification oxide film and the second oxide film formed in the low voltage device region;
- simultaneously growing a second nitrification oxide film in the low voltage device region and a third oxide film on the second nitrification oxide film, and at the same time growing a third nitrification oxide film between the second oxide film and the semiconductor substrate in the high voltage device region;
- nitrifying the first oxide film of the high voltage device region to form a fourth nitrification oxide film formed along with the first nitrification oxide film and nitrifying the third oxide film of the low voltage device region to form a fifth nitrification oxide film formed along with the second nitrification oxide film, by means of a nitrification treatment process;
- forming a conductive material layer on the entire structure;
- forming a stack structure of a first gate oxide film consisting of a fifth nitrification oxide film and a gate in the low voltage device region and a stack structure of a second gate oxide film consisting of the third nitrification oxide film/second oxide film/fourth nitrification oxide film and a gate in the high voltage device region, by means of a patterning process;
- and
- forming an insulating spacer at the sidewalls of the gate and source/drain in the semiconductor substrate at the sidewall of the gate.
Dependencies are inferred from the claim text.