Process for manufacturing semiconductor device including lamp annealing
AssigneeRenesas Technology Corp.
InventorHiromi Makimoto
Life of this patent
Estimating the term…
Abstract
A process for a semiconductor device includes the following steps applied to a silicon substrate wherein a floating gate electrode having sidewalls is formed above the semiconductor substrate with a tunnel oxide film intervened and wherein active regions are arranged in places adjoining both sides of floating gate electrode, as seen from above, and arsenic is injected into said active regions as an impurity: the lamp annealing step of carrying out a heat treatment in the atmosphere of a first gas mixture which includes nitrogen and oxygen; and the oxygen film formation step of carrying out a heat treatment in the atmosphere of a second gas mixture which includes oxygen so as to form an oxide film on sidewalls of floating gate electrode after the lamp annealing step.
Claims3
A process for manufacturing a semiconductor device, which includes the following steps applied to a semiconductor substrate wherein a floating gate electrode having sidewalls is formed above the semiconductor substrate with an oxide film intervened and wherein active regions from which the surface of said semiconductor substrate is exposed are arranged in places adjoining both sides of said floating gate electrode, as seen from above, and an impurity is injected into said active regions:
- a lamp annealing step of carrying out a heat treatment in the atmosphere of a first gas mixture which includes nitrogen and oxygen;
- and
- a oxygen film formation step of carrying out a heat treatment in the atmosphere of a second gas mixture which includes oxygen so as to form an oxide film on said sidewalls after said lamp annealing step.
Dependencies are inferred from the claim text.