Semiconductor devices and methods for manufacturing the same

A method for manufacturing a semiconductor device, the semiconductor device having a DRAM including a cell capacitor formed in a DRAM region of a semiconductor substrate, and a capacitor element formed in an analog element region of the semiconductor substrate, the method comprising:

• forming a first conducting layer and etching a portion of the first conducting layer to form a bit line that is a component of the DRAM and a connection layer that is located in a common layer with the bit line and used to electrically connect a lower electrode of the capacitor element and another semiconductor element;
• forming a second conducting layer and etching a portion of the second conducting layer to form a storage node of the cell capacitor and the lower electrode;
• forming a dielectric layer and etching a portion of the dielectric layer to form a dielectric layer of the cell capacitor and a dielectric layer of the capacitor element;
• and
• forming a third conducting layer and etching a portion of the third conducting layer to form a cell plate of the cell capacitor and an upper electrode of the capacitor element.