Method for forming thin films of semiconductor devices
AssigneeHynix Semiconductor Inc.
InventorsSung Jae Joo, Seok Kiu Lee
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Abstract
Methods for forming thin films of semiconductor devices, and more specifically, methods for forming thin films of semiconductor devices, wherein the semiconductor substrate is subjected to a thin film formation process in a thin film formation apparatus containing a chamber, a susceptor vertically movable in the chamber and a heater disposed within the susceptor, the method comprising a preheating process for stabilizing the internal temperature of the chamber by vertically moving the susceptor a predetermined number of times prior to the thin film formation process.
Claims14
A method for forming a thin film on a semiconductor substrate in a thin film formation apparatus containing a chamber, a susceptor vertically movable in the chamber and the susceptor comprising a heater, the method comprising:
- a preheating process for stabilizing the internal temperature of the chamber by vertically moving the susceptor and heater within the chamber a predetermined number of times while the heater is generating heat prior to the thin film formation process thereby reducing temperature gradients within the chamber.
A method for forming a thin film on a semiconductor substrate in a thin film formation apparatus containing a chamber, a susceptor vertically movable in the chamber and a heater disposed within the susceptor, the method comprising:
- performing a preheating process, prior to a thin film formation process, for stabilizing the internal temperature of the chamber by setting the temperature of the heater higher than the temperature required for the thin film formation process for a predetermined time period sufficient to compensate for a temperature drop due to vertical movement of the susceptor in the thin film formation process.
A method for forming a thin film on a semiconductor substrate in a CVD chamber, the method further comprising:
- a preheating process for stabilizing the internal temperature of the chamber by vertically moving the susceptor that comprises a heater a predetermined number of times prior to a thin film formation process while the heater is generating heat thereby reducing temperature gradients within the chamber.
Dependencies are inferred from the claim text.