Semiconductor device, method of manufacturing semiconductor device, and system for evaluating electrical characteristics of semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming a semiconductor element in a semiconductor active region, the semiconductor active region being in an electrically floating state, and calculating the generation rate of electron hole pairs caused by impact ionization in said semiconductor element;
• calculating a volume integral of said generation rate of electron hole pairs in an area where the impact ionization is caused;
• calculating a time integral of physical quantities including the volume integral;
• evaluating time-dependent variations of electrical characteristics of said semiconductor element on the basis of said time integral;
• and
• manufacturing a semiconductor device based on results of the evaluation step.

A method of manufacturing a semiconductor device, comprising:

• forming a first insulated gate field effect transistor having a body contact electrode in a first semiconductor active region on an insulated film layer on a substrate, measuring at least a body current of said first semiconductor active region and creating data concerning at least said body current;
• forming a second insulated gate field effect transistor without a body contact electrode in a second semiconductor active region, the semiconductor active region being in an electrically floating state, on said insulated film layer, and calculating the generation rate of electron hole pairs caused by impact ionization in said second insulated gate field effect transistor;
• calculating a volume integral of said generation rate of electron hole pairs in a region where impact ionization is caused;
• calculating time-dependent variations of electrical characteristics of said second insulated gate field effect transistor on the basis of said volume integral and the body current in said data;
• and
• manufacturing a semiconductor device on the basis of said calculated time-dependent variations of said electrical characteristics.

A method of manufacturing a semiconductor device, comprising:

• performing initial designing of a semiconductor element to be formed in a semiconductor active region, the semiconductor active region being in an electrically floating state;
• calculating the generation rate of electron hole pairs impact ionization in said semiconductor element;
• calculating a volume integral of said generation rate of electron hole pairs in a region where said impact ionization is caused;
• evaluating time-dependent variations of electrical characteristics of said semiconductor element on the basis of said volume integral;
• and
• redesigning said semiconductor element on results of the evaluating step.

A method of manufacturing a semiconductor device, comprising:

• forming a semiconductor element in a semiconductor active region, the semiconductor active region being in an electrically floating state, and calculating the generation rate of electron hole pairs caused by impact ionization in said semiconductor element;
• calculating a volume integral of said generation rate of electron hole pairs in a region where said impact ionization is caused;
• calculating a physical model quantity after application of stresses to said semiconductor element, on the basis of said volume integral;
• evaluating time-dependent variations of electrical characteristics after application of stress to said semiconductor element, on the basis of said calculated physical model quantities and
• manufacturing a semiconductor device based on results of the evaluating step.