Capacitor of semiconductor device and fabrication method thereof

Abstract

The present invention relates to a capacitor of a semiconductor device and to a method for its fabrication; and, more particularly, to a capacitor of a semiconductor device that can reduce current leakage and compensate for the Bi substances that have volatilized at a high temperature by providing an amorphous bismuth oxide layer at least at one of the upper and lower parts of a ferroelectric layer containing Bi or at both locations, and to a fabrication method therefor. The capacitor of the semiconductor device of the present invention comprises: a first electrode formed on a substrate; a ferroelectric layer containing bismuth formed on the first electrode; a second electrode formed on the ferroelectric layer containing bismuth; and an amorphous bismuth oxide layer positioned at least at one of the places between the first electrode and the ferroelectric layer and between the ferroelectric layer and the electrode or at both locations.

Dependencies are inferred from the claim text.