Stripper composition for photoresist

Abstract

The invention relates to a TFT-LCD high-performance stripper composition for a photoresist, and more particularly to a stripper composition for a photoresist comprising: 20-60 wt % of monoethanolamine, 15-50 wt % of N,N-dimethylacetamide, 15-50 wt % of carbitol, and 0.1-10 wt % of gallic acid. The invention also provides a stripper composition for a photoresist comprising: 20-60 wt % of monoethanolamine, 15-50 wt % of N,N-dimethylacetamide, and 15-50 wt % of carbitol. The stripper composition for a photoresist of the invention significantly reduces stripping time when applied to the TFT-LCD manufacturing process and leaves no impurity particles. By allowing the hard baking and ashing processes to be omitted, the gate process line can be simplified, which enables cost reduction. In addition, when it is applied to a process wherein silver (Ag) is used as reflective/transflective layer, it offers stripping ability and corrosion resistance of the pure Ag layer.

Dependencies are inferred from the claim text.