Electropolishing method
AssigneeKabushiki Kaisha Toshiba
InventorsYoshitaka Matsui, Hiroshi Kosukegawa, Masako Kodera, Naoto Miyashita
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Abstract
A target material is electropolished by applying a voltage between an anode electrode and a counter electrode while bringing the anode electrode into contact with the surface of the target material. The anode electrode is formed of an electrode material having a current density not higher than 10 mA/cm2 upon application of a voltage of +2.5V vs. silver/silver chloride electrode within a 0.1 M perchloric acid solution in an electrochemical measurement using a potentiostat.
Claims18
An electropolishing method, comprising applying a voltage across an anode electrode and a counter electrode within an electrolytic solution while bringing said anode electrode into contact with a surface of a target material, thereby electropolishing the target material, wherein said anode electrode is formed of an electrode material having a current density not higher than 10 mA/cm2 upon application of a voltage of +2.5V vs. silver/silver chloride electrode within a 0.1 M perchloric acid solution in an electrochemical measurement using a potentiostat.
An electropolishing method, comprising applying a voltage across an anode electrode and a counter electrode within an electrolytic solution while bringing said anode electrode into contact with a surface of a target material, thereby electropolishing the target material, wherein said anode electrode has an insulating film provided on a side surface thereof, and wherein said target material is a buried metallic wiring material which is formed within a wiring groove provided within an insulating film above a semiconductor substrate, and covers a surface of said insulating film.
An electropolishing method, comprising applying a voltage across an anode electrode and a counter electrode within an electrolytic solution while bringing said anode electrode into contact with a surface of a target material, thereby electropolishing the target material, wherein said counter electrode has a solid electrolyte film, an ion exchange resin film or a resistivity film formed on a surface thereof, and wherein said target material is a buried metallic wiring material which is formed within a wiring groove provided within an insulating film above a semiconductor substrate, and covers a surface of said insulating film.
Dependencies are inferred from the claim text.