Sputtering method and sputtering apparatus
AssigneeCanon Kabushiki Kaisha
InventorsToshihiro Yamashita, Hiroshi Echizen, Yasuyoshi Takai, Hidetoshi Tsuzuki
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Abstract
In a sputtering method for forming a film on a substrate in a film forming space while monitoring emission intensity of plasma, the method comprises the steps of detecting a thickness of the film formed on the substrate; comparing a detected value with a preset value of the film thickness; and deciding a target value of the emission intensity in accordance with a compared result. With the method, a transparent conductive film is formed which has high uniformity in film thickness, sheet resistance and transmittance and hence has superior characteristics.
Claims7
A sputtering method for forming a film on a substrate in a film forming space while monitoring emission intensity of plasma, the method comprising the steps of:
- detecting a thickness of the film formed on said substrate;
- comparing a detected value with a preset value of the film thickness;
- deciding a target value of the emission intensity that will provide the preset value of the film thickness in accordance with a compared result;
- and
- adjusting the emission intensity to the target value to increase a transmittance of the film formed on the substrate to compensate for an increase in resistance of the film.
Dependencies are inferred from the claim text.