High throughput dual ion beam deposition apparatus

A method of depositing a material by sputtering, the method comprising the steps of:

• providing a vacuum chamber including a first window and a second window positioned between an antenna a plasma chamber, the second window being positioned adjacent to said first window wherein the second window is positioned relative to the first window to form a gap spaced therebetween said first and second windows;
• providing a substrate stage for holding a substrate, the substrate stage being positioned in the vacuum chamber;
• providing a first target holder capable of holding a first plurality of target holding members, said first target holder being placed in the vacuum chamber and being rotatable about a first individual axis;
• providing a second target holder capable of holding a second plurality of target holding members, said second target holder being placed in the vacuum chamber proximate to the first target holder and being rotatable about a second individual axis;
• providing a first ion beam source for directing ions at a first desired sputtering target in a first target holding member of the first plurality of target holding members;
• providing a second ion beam source for directing ions at a second desired sputtering target in a first target holding member of the second plurality of target holding members;
• bringing the first target holding member of the first plurality of target holding members which bears the first desired sputtering target into a first sputtering position;
• stopping the second ion beam source and depositing a portion of the first desired sputtering target using the first ion beani source onto the substrate to form a first material layer while bringing the first target holding member of the second plurality of target holding members which bears the second desired sputtering target into a second sputtering position;
• stopping the first ion beam source;
• and
• depositing a portion of the second desired sputtering target using the second ion beam source onto the substrate to form a second material layer.

An ion beam deposition system for sputtering material layers comprising:

• a vacuum chamber including a first window and a second window positioned between an antenna and a plasma chamber, the second window being positioned adjacent to said first window wherein the second window is positioned relative to the first window to form a gap spaced therebetween said first and second windows;
• a substrate stage for holding a substrate within the vacuum chamber;
• and
• a plurality of target holding structures, wherein each target holding structure is rotatable about an individual axis, with each target holding structure capable of holding at least one target holding member in the vacuum chamber wherein each target holding structure has an ion beam source for directing ions at the at least one target holding member of each of the plurality of target holding structures.

An ion beam source for sputtering a target, the ion beam source comprising:

• a first window with a side and an opposed side;
• a second window with a side and an opposed side wherein the side of the second window is positioned proximate to the opposed side of the first window and positioned relative to the first window to form a gap with a volume spaced therebetween said first and second windows;
• a plasma chamber capable of forming a plasma therein, the plasma chamber being positioned proximate to the opposed side of the second window;
• and
• an antenna positioned proximate to the side of the first window.