Method for using DRIE with reduced lateral etching

Abstract

A process for manufacturing a wafer having a multiplicity of MEMS devices such as mirrors with gimbals formed thereon is disclosed. A silicon wafer having a thickness less than about 300 μm is attached to a carrier or support wafer by a layer of bonding agent such as a layer or coating of photo-resist. The MEMS devices such as a gimbal mirror are formed on the silicon wafer by providing a mask and etching through the wafer with a DRIE process. Undesired lateral etching at the bottom of the wafer caused by the formation of an electrical charge at the bonding layer is eliminated or substantially reduced by patterning the layer of photo-resist used as the bonding agent such that areas of the support wafer not covered by the bonding layer are aligned with selected etch lines which etch completely through the silicon wafer to form devices.

Dependencies are inferred from the claim text.