Semiconductor devices having multilevel interconnections and methods for manufacturing the same

A method for manufacturing a contact stud in a semiconductor device, the method comprising:

• removing a portion of an insulating layer of a semiconductor substrate to form a hole that exposes an underlying conductive layer;
• forming a glue layer on bottom and side walls of the hole;
• forming a Ti seed layer on the glue layer in the hole;
• forming an aluminum-containing layer on the Ti seed layer;
• and
• thermally treating the substrate to form a contact stud that extends through the hole in the insulating layer to electrically contact the underlying conductive layer, the contact stud comprising a TiAlx core.

A method for manufacturing a semiconductor device, the method comprising:

• forming a metal interconnection layer on a semiconductor substrate;
• forming an intermetal dielectric layer on the metal interconnection layer;
• removing a portion of the intermetal dielectric layer to form a hole therein that exposes a portion of the metal interconnection layer;
• and
• forming a contact stud comprising a TiAlx core, a TiAlx liner disposed on bottom and side walls of the TiAlx core, and a titanium nitride (TiN) barrier layer interposed between the TiAlx core and the TiAlx liner in the hole.