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US 6,747,335 B1Granted
Magnetic memory cell
AssigneeHewlett-Packard Development Company, L.P.
InventorDarrel R. Bloomquist
Life of this patent
Estimating the term…
Abstract
A memory cell includes a magnetic data storage layer, a magnetic reference layer, and an insulating layer between the data storage layer and the reference layer. A resistive layer having a known electrical resistance is positioned adjacent the insulating layer.
Claims15
A memory cell comprising:
- a magnetic data storage layer;
- a magnetic reference layer;
- an insulating layer between the data storage layer and the reference layer;
- and
- a resistive layer having a known electrical resistance positioned adjacent the insulating layer.
2 more elements
A data storage device comprising:
- a plurality of magnetic memory cells each having a data storage layer, a reference layer and an insulating layer between the data storage layer and the reference layer;
- and
- a resistive layer having a known electrical resistance positioned adjacent the insulating layer of each memory cell.
Dependencies are inferred from the claim text.