US 6,747,322 B2Granted

Semiconductor device, memory system and electronic apparatus

AssigneeSeiko Epson Corporation

InventorsJunichi Karasawa, Kunio Watanabe

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Abstract

A semiconductor device having a memory cell including first and second load transistors, first and second driver transistors, and first and second transfer transistors. The semiconductor device includes first and second gate—gate electrode layers, first and second drain—drain wiring layers, and first and second drain-gate wiring layers. The first drain-gate wiring layer and the second drain-gate wiring layer are located in different layers. The first drain-gate wiring layer is located below the first drain—drain wiring layer, and the second drain-gate wiring layer is located in above the first drain—drain wiring layer. This structure provides a semiconductor device that has reduced cell area. The invention also provides a memory system and electronic apparatus that include the above semiconductor device.

Claims11

Dependent claims

A semiconductor device having a memory cell including a first load transistor, a second load transistor, a frat driver transistor, a second driver transistor, a first transfer transistor, and a second transfer transistor, the semiconductor device comprising:

a first gate—gate electrode layer including a gate electrode of the first load transistor and a gate electrode of the first driver transistor;
a second gate—gate electrode layer including a gate electrode of the second load transistor and a gate electrode of the second driver transistor;
a first drain—drain wiring layer that forms a part of a connection structure that electrically connects a drain of the first load transistor and a drain of the fret driver transistor;
a second drain—drain wiring layer that forms a part of a connection structure that electrically connects a drain of the second load transistor and a drain of the second driver transistor;
a first drain-gate wiring layer that forms a part of a connection structure that electrically connects the first gate—gate electrode layer and the second drain—drain wiring layer;
and
a second drain-gate wiring layer that forms a part of a connection structure that electrically connects the second gate—gate electrode layer and she first drain—drain wiring layer,
wherein the first drain-gate wiring layer and the second drain gate wiring layer are located in different layers,
the first drain-gate wiring layer is located in a layer below the first drain—drain wiring layer, and
the second drain gate wiring layer is located in a layer entirety above the first drain—drain wiring layer.

7 more elements

A semiconductor device having a memory cell including a first toad transistor, a second land transistor, a first;

driver transistor, a second driver transistor, a first transfer transistor, and a second transfer transistor, the semiconductor device comprising:
a first gate—gate electrode layer including a gate electrode of the first load transistor and a gate electrode of the first driver transistor;
a second gate—gate electrode lever including a gate electrode of the second load transistor and a gate electrode of the second driver transistor;
a first drain—drain wiring layer that forms a gate of a connection structure that electrically connects a drain of the first load transistor and a drain of the first driver transistor;
a second drain—drain wiring layer that forms a part of a connection structure that electrically connects a drain of the second load transistor and a drain of the second driver transistor;
a first drain-gate wiring layer that forms a part of a connection structure that electrically connects the first gate—gate electrode layer and the second drain—drain wiring layer;
and
a second drain-gate wiring layer that forms a part of a connection structure that electrically connects the second gate—gate electrode layer and the first drain drain wiring layer,
wherein the first drain-gate wiring layer and the second drain-gate wiring layer are located in different levers,
the first drain-gate wiring layer is located in a layer below the first drain drain wiring layer, and
the second drain-gate wiring layer is located in a layer above the first drain—drain wiring layer,
wherein the first gate—gate electrode layer, the second gate—gate electrode layer and the first drain-gate wiring layer are located in a first conductive layer,
the first drain—drain wiring layer and the second drain—drain wiring layer axe located in a second conductive layer, and
the second drain-gate wiring layer is located in a third conductive layer.

11 more elements

Dependencies are inferred from the claim text.