Semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorMitsuru Tanabe
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Abstract
An undoped In0.52Al0.48As buffer layer (thickness: 500 nm), an undoped In0.53Ga0.47As channel layer (thickness: 30 nm), an n-type delta doped layer for shortening the distance between the channel layer and a gate electrode and attaining a desired carrier density, an undoped In0.52Al0.48As Schottky layer, and an n-type In0.53Ga0.47As cap layer doped with Si (thickness: 50 nm) are formed in this order on the principal surface of an Fe-doped InP semi-insulating substrate. An n-type GaAs protective layer doped with Si (thickness: 7.5 nm) is formed between the cap layer and source/drain electrodes for protecting the cap layer.
Claims2
A semiconductor device comprising:
- a cap layer formed on a substrate and made of a semiconductor including In;
- an ohmic electrode formed over the cap layer;
- and
- a protective layer formed between the cap layer and the ohmic electrode and made of n-type GaAs, the protective layer preventing In atoms, contained in the cap layer, from diffusing toward the ohmic electrode and preventing metal atoms, contained in the ohmic electrode, from diffusing toward the cap layer,
- wherein the thickness of the protective layer is between 5 nm and 15 nm inclusively.
Dependencies are inferred from the claim text.