Back to results
US 6,746,968 B1Granted
Method of reducing charge loss for nonvolatile memory
AssigneeMacronix International Co., Ltd.
InventorsUway Tseng, Ching-Yu Chang, Hung-Yu Chiu, Wenpin Lu
Life of this patent
Estimating the term…
Abstract
A method of reducing charge loss for nonvolatile memory. First, a semiconductor substrate having a semiconductor device thereon is provided. Next, a dielectric layer is formed on the entire surface of the semiconductor substrate, and a thermal treatment is performed in an atmosphere containing a reactive gas, and the reactive gas reacts with free ions remaining on the semiconductor substrate from prior manufacturing processes. Finally, a metal layer is formed on the dielectric layer.
Claims9
A method of reducing charge loss for nonvolatile memory comprising:
- providing a semiconductor substrate having a semiconductor device thereon;
- forming a dielectric layer on the entire surface of the semiconductor substrate;
- performing a thermal treatment in an atmosphere containing a reactive gas, such that the reactive gas reacts with free ions remaining in the semiconductor substrate from manufacturing processes, wherein the free ions comprises Na+ or H+;
- and
- forming a metal layer on the dielectric layer.
2 more elements
Dependencies are inferred from the claim text.