Manufacture of semiconductor device with copper wiring
AssigneeFujitsu Limited
InventorsNobuyuki Ohtsuka, Noriyoshi Shimizu
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Abstract
A method of manufacturing a semiconductor device including the steps of: (a) preparing a semiconductor substrate formed with an insulating layer having a wiring recess; and (b) forming a conductive layer by chemical vapor deposition on a surface of the semiconductor substrate including an inner surface of the wiring recess, while lamp light is applied to the semiconductor substrate, the conductive layer being substantially made of copper. With this method, Cu wiring having a high adhesion force is formed by chemical vapor deposition.
Claims33
A method of manufacturing a semiconductor device comprising the steps of:
- (a) preparing a semiconductor substrate formed with an insulating layer having a wiring recess on a front surface;
- and
- (b) irradiating halogen lamp light while depositing a copper layer by chemical vapor deposition on the front surface of the semiconductor substrate including an inner surface of the wiring recess,
- wherein said step (b) provides said copper layer containing fewer impurities than that of a copper layer formed by resistance heating CVD.
A method of manufacturing a semiconductor device comprising the steps of:
- (a) preparing a semiconductor substrate formed with an insulating layer having a wiring recess on a front surface;
- and
- (b) depositing a conductive layer by chemical vapor deposition on the front surface of the semiconductor substrate including an inner surface of the wiring recess, while lamp light is applied to the semiconductor substrate, the conductive layer consisting essentially of copper,
- wherein said step (b) is performed by placing the semiconductor substrate on a susceptor made of material transparent to the lamp light and applying the lamp light from a rear surface of the semiconductor substrate through said susceptor.
A method of manufacturing a semiconductor device comprising the steps of:
- (a) preparing a semiconductor substrate formed with an insulating layer having a wiring recess on a front surface;
- and
- (b) depositing a conductive layer by chemical vapor deposition using an organic source on the insulating layer including an inner surface of the wiring recess, while lamp light from a high temperature filament is applied to a rear surface of the semiconductor substrate, the conductive layer consisting essentially of copper.
A method of manufacturing a semiconductor device comprising the steps of:
- (a) preparing a semiconductor substrate formed with an insulating layer having a wiring recess on a front surface;
- and
- (b) introducing a source gas of copper into a reaction chamber at a pressure equal to or less than 100 Pa, and irradiating halogen lamp light while performing chemical vapor deposition of a copper layer on the front surface of the semiconductor substrate including an inner surface of the wiring recess,
- wherein said step (b) produces a copper layer containing fewer impurities than that of a copper layer formed by resistance heating CVD.
Dependencies are inferred from the claim text.