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US 6,746,937 B2Granted
PD-SOI substrate with suppressed floating body effect and method for its fabrication
AssigneeMicron Technology, Inc.
InventorKevin L. Beaman
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Abstract
A partially-depleted Silicon-on-Insulator (SOI) substrate with minimal charge build up and suppressed floating body effect is disclosed, as well as a simple method for its fabrication. A thin Si/Ge epitaxial layer is grown between two adjacent epitaxial silicon layers of a SOI substrate, and as part of the silicon epitaxial growth. The thin Si/Ge epitaxial layer introduces misfit dislocations at the interface between the thin Si/Ge epitaxial layer and the adjacent epitaxial silicon layers, which removes undesired charge build up within the substrate.
Claims12
A method for forming a SOI structure, comprising the steps of:
- forming an oxide layer over a first semiconductor substrate;
- forming a first silicon layer over a second silicon substrate;
- forming a silicon/germanium layer over said first silicon layer, said silicon/germanium layer comprising about 0.5 to 6% germanium, said silicon/germanium layer forming a layer of misfit dislocation regions;
- forming a second silicon layer over said silicon/germanium layer, said second silicon layer of said SOI structure grown in a chamber using no germanium gaseous source;
- bonding said second silicon layer to said oxide layer;
- and
- etching back said second silicon substrate.
4 more elements
Dependencies are inferred from the claim text.