Semiconductor device having capacitor and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsTakashi Yoshitomi, Masahiko Matsumoto
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Abstract
A semiconductor device, comprising a first wiring formed in a first insulating film, a second insulating film formed on the first insulating film, a first electrode film selectively formed on the second insulating film, a third insulating film formed on the first electrode film, and having an end portion and a central portion, wherein the end portion has a thickness thinner than the central portion, a second electrode film formed on the central portion of the third insulating film such that the second electrode film faces the first electrode film.
Claims3
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first wiring in a first insulating film;
- forming a second insulating film on the first insulating film;
- selectively forming a first electrode film on the second insulating film in a manner to overlap partially with the first wiring;
- selectively forming a third insulating film on the first insulating film;
- forming a second electrode film on the third insulating film;
- forming a fourth insulating film on the first and second electrode films and the second insulating film;
- forming a fifth insulating film on the fourth insulating film;
- forming a first connecting member electrically connected to the first wiring within the fourth and second insulating films, forming a second connecting member electrically connected to the second electrode film within the fourth insulating film and forming a third connecting member electrically connected to the first electrode film within the fourth insulating film;
- and
- forming second, third and fourth wirings connected to the first, second and third connecting members within the fifth insulating film.
Dependencies are inferred from the claim text.