Capacitor manufacturing method having dielectric formed before electrode
AssigneeRenesas Technology Corp.
InventorsHiromi Itoh, Yoshikazu Tsunemine, Keiichiro Kashihara, Akie Yutani, Tomonori Okudaira
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AssigneeRenesas Technology Corp.
InventorsHiromi Itoh, Yoshikazu Tsunemine, Keiichiro Kashihara, Akie Yutani, Tomonori Okudaira
Estimating the term…
A method for manufacturing a capacitor is provided which can form a lower electrode having a high aspect ratio without suffering deterioration of the capacitor electric characteristics even when a platinum-group metal is adopted as the material of the lower electrode and a metal oxide having a high dielectric constant is adopted as the material of the dielectric film. Holes (8) that reach contact plugs (2) are formed in an insulating film (7). Then a dielectric film (9) is formed on the surfaces of the holes (8). Next the dielectric film (9) on the bottoms of the holes (8) are etched away to form holes (18) reaching the contact plugs (2). Lower electrodes (11) are then formed to fill the holes (8) and (18).
A capacitor manufacturing method, comprising the steps of:
Dependencies are inferred from the claim text.