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US 6,746,615 B1Granted
Methods of achieving selective etching
AssigneeFSI International, Inc.
InventorChristina Ann Ellis
Life of this patent
Estimating the term…
Abstract
An in-process microelectronics device is treated by applying a heated liquid to the surface of the in-process microelectronics device, removing a portion of the liquid from the surface of the in-process microelectronics device and applying anhydrous HF gas to the surface of the in-process microelectronics device.
Claims23
A method of selectively etching an in-process microelectronics device comprising the steps of:
- providing an in-process microelectronics device comprising a first oxide and a second oxide;
- applying liquid water at a predetermined temperature to the surface of the in-process microelectronics device;
- removing a portion of the liquid water from the surface of the in-process microelectronics device, at least a portion of the liquid water remaining on the in-process microelectronics device;
- and
- selectively etching at least a portion of the surface of the in-process microelectronics device by applying anhydrous HF gas and optionally water vapor to the surface of the in-process microelectronics device,
- wherein the temperature of the liquid water is predetermined to facilitate selectively etching one of the oxides relative to the other oxide during the selectively etching step.
3 more elements
A method of treating an in-process microelectronics device having at least one oxide thereon comprising the steps of:
- providing an in-process microelectronics device having at least one oxide thereon;
- applying a liquid cleaning fluid to the surface of the in-process microelectronics device wherein the liquid cleaning fluid is at a temperature above ambient;
- removing a portion of the liquid cleaning fluid from the surface of the in-process microelectronics device, at least a portion of the liquid cleaning fluid remaining on the surface of the in-process microelectronics device;
- applying anhydrous HF gas and optionally water vapor to the surface of the in-process microelectronics device to etch an oxide on at least a portion of the surface of the in-process microelectronics device.
1 more element
A method for etching a surface of an in-process microelectronics device comprising the steps of:
- positioning at least one in-process microelectronics device on a rotatable support;
- causing the rotatable support to rotate such that the in-process microelectronics device rotates around an axis;
- causing a heated liquid to contact and preheat the in-process microelectronics device as the in-process microelectronics device rotates about the axis;
- and
- causing a gaseous etchant to etchingly contact the in-process microelectronics device as the in-process microelectronics device rotates about the axis.
2 more elements
Dependencies are inferred from the claim text.