Nitride CMP slurry having selectivity to nitride
AssigneeHynix Semiconductor Inc.
InventorsHyung Hwan Kim, Sang Ick Lee
Life of this patent
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Abstract
A nitride CMP slurry having selectivity to nitride over oxide. The slurry increases the polishing speed of a nitride film by varying the pH of the slurry, and polishes the nitride film faster than an oxide film by decreasing the polishing speed of the oxide film. As a result, the slurry provides a CMP process for manufacturing a high density and highly integrated semiconductor device and a structural development of new concept device.
Claims16
A CMP slurry composition for nitride films and not metal films, the CMP slurry comprising an abrasive and phosphoric acid, the CMP slurry having a nitride to oxide selectivity ratio of greater than 1 wherein the abrasive is selected from the group consisting of CeO2, MnO2, ZrO2, Al2O3, and combinations thereof and having a grain size of the abrasive ranging from about 100 nm to about 500 nm.
A CMP slurry composition for polishing nitride films not metal films, the composition comprising an abrasive in an amount ranging from about 0.1 to 20% by weight of the slurry and phosphoric acid in an amount ranging from about 0.01 to about 20% by weight of the slurry a grain size of the abrasive ranging from about 100 nm to about 500 nm.
Dependencies are inferred from the claim text.