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US 6,724,660 B2Granted
Integrated semiconductor memory device having quantum well buried in a substrate
AssigneeSTMicroelectronics S.r.l.
InventorsThomas Skotnicki, Stephane Monfray, Michel Haond
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Abstract
An electronic device, such as an opto-electronic device and an integrated semiconductor memory device, includes at least one integrated memory point structure including a quantum well semiconductor area buried in the substrate of the structure and disposed under the insulated gate of a transistor. A biasing voltage source is adapted to bias the structure to enable charging or discharging of charges in the quantum well or outside the quantum well.
Claims25
An integrated semiconductor memory device comprising:
- at least one integrated memory point structure including
- a quantum well area buried in a substrate of the structure and disposed under an insulated gate of a transistor;
- and
- biasing means adapted to bias the structure to enable charging or discharging of charges in the quantum well or outside the quantum well.
1 more element
An electronic device comprising:
- at least one integrated memory point structure including
- a quantum well area buried in a substrate of the structure and disposed under an insulated gate of a transistor;
- and
- biasing means adapted to bias the structure to enable charging or discharging of charges in the quantum well or outside the quantum well.
1 more element
Dependencies are inferred from the claim text.