Highly-linear, wide-input-range, wide control-range, low-voltage differential voltage controlled transconductor

A voltage controlled, differential transconductor, comprising:

• a first first-side transconductor circuit adapted to receive a first input voltage signal and to conduct a first current signal;
• a first second-side transconductor circuit adapted to receive a second input voltage signal and to conduct a second current signal;
• a second first-side differential transconductor circuit having substantially the same construction as the first first-side transconductor circuit, and adapted to receive the first input voltage signal and to conduct a third current signal;
• a second second-side transconductor circuit having substantially the same construction as the first second-side transconductor circuit, and adapted to receive the second input voltage signal and to conduct a fourth current signal;
• a first control circuit adapted to control the first and third current signals of the first first-side transconductor circuit and of the second first-side transconductor circuit;
• and
• a second control circuit adapted to control the second and fourth current signals of the first second-side transconductor circuit and of the second second-side transconductor circuit;
• the first first-side transconductor circuit being connected to the second second-side transconductor circuit and the first second-side transconductor circuit being connected to the second first-side transconductor circuit, such that a first output current is provided that is a difference of the third current signal and the second current signal, and a second output current is provided that is a difference of the first current signal and the fourth current signal.

A voltage controlled, differential transconductor, comprising:

• a first first-side transconductor circuit including a first MOSFET transistor, and adapted to receive a first input voltage signal and to conduct a first current signal;
• a first second-side transconductor circuit including a second MOSFET transistor, and adapted to receive a second input voltage signal and to conduct a second current signal;
• a second first-side differential transconductor circuit having substantially the same construction as the first first-side transconductor circuit, including a third MOSFET transistor having substantially the same construction as the first MOSFET transistor, and adapted to receive the first input voltage signal and to conduct a third current signal;
• a second second-side transconductor circuit having substantially the same construction as the first second-side transconductor circuit, including a fourth MOSFET transistor having substantially the same construction as the third MOSFET transistor, and adapted to receive the second input voltage signal and to conduct a fourth current signal;
• a first control circuit adapted to control the first and the third currents of the first side transconductor circuit;
• and
• a second control circuit adapted to control the second and the fourth currents of the second side transconductor circuit;
• the first first-side transconductor circuit being connected to the second second-side transconductor circuit and the first second-side transconductor circuit being connected to the second first-side transconductor circuit, such that a first output current is provided that is a difference of the third current signal and the second current signal, and a second output current is provided that is a difference of the first current signal and the fourth current signal.

A voltage controlled transconductor, comprising:

• a first first-side transconductor circuit comprising first, second and third MOSFET transistors connected in series between power supply nodes, the first MOSFET transistor being adapted to receive a first input voltage signal and to conduct a first current signal;
• a first second-side transconductor circuit comprising fourth, fifth and sixth MOSFET transistors connected in series between power supply nodes, the fourth MOSFET transistor being adapted to receive a second input voltage signal and to conduct a second current signal;
• a second first-side differential transconductor circuit having substantially the same construction as the first first-side transconductor circuit, and comprising seventh, eighth and ninth MOSFET transistors connected in series between power supply nodes, the seventh MOSFET transistor being adapted to receive the first input voltage signal and to conduct a third current signal;
• a second second-side transconductor circuit having substantially the same construction as the first second-side transconductor circuit, and comprising tenth, eleventh and twelfth MOSFET transistors connected in series between power supply nodes, the tenth MOSFET transistor being adapted to receive the second input voltage signal and to conduct a fourth current signal;
• a first control circuit connected to the second and eighth MOSFET transistors and adapted to control a gate-to-source voltage of the second and eighth MOSFET transistors, and to control the first and the third currents of the first side transconductor circuit;
• and
• a second control circuit connected to the fifth and eleventh MOSFET transistors and adapted to control a gate-to-source voltage of the fifth and eleventh MOSFET transistors, and to control the second and the fourth currents of the first side transconductor circuit;
• the third MOSFET transistor being connected to the twelfth MOSFET transistor in a current mirror configuration, and the sixth MOSFET transistor being connected to the ninth MOSFET transistor in a current mirror configuration, such that a first output current is provided that is a difference of the third current signal and the second current signal, and a second output current is provided that is a difference of the first current signal and the fourth current signal.