Die corner alignment structure
AssigneeAdvanced Micro Devices, Inc.
InventorsThomas Werner, Gunter Grasshoff, Bernd Schulz, Carsten Hartig
Life of this patent
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Abstract
A semiconductor device structure comprises a corner structure enclosed by a delineation region, wherein the shape of the corner structure does not exhibit any symmetry with respect to point symmetry and axial symmetry, such that the corner structure is unambiguously recognizable by an automated alignment system. Furthermore, the inner region of the corner structure may be filled with a pattern indicating the type of material layer in which the corner structure is formed. The corner structure exhibits a strong contrast even if the wafer is subjected to a CMP treatment.
Claims18
A semiconductor device, comprising:
- a die region defined by an exposure field of a lithography apparatus for fabricating the semiconductor device, the die region comprising a material layer and a corner structure formed in said material layer and located at the corner of the die region in spaced relationship to an edge of the die region;
- and
- a delineation region at least partially enclosing said corner structure, said delineation region comprising a plurality of elongated patterns formed in said material layer, wherein the delineation region is asymmetric with respect to point symmetry and axial symmetry and defines an inner region of the corner structure, and wherein the delineation region comprises a plurality of angles of approximately 90° defined by at least some of the elongated patterns.
A semiconductor device, comprising:
- a die region defined by an exposure field of a lithography apparatus for fabricating the semiconductor device, the die region comprising a material layer and a corner structure formed in said material layer and located at the corner of the die region in spaced relationship to an edge of the die region;
- and
- a delineation region at least partially enclosing said corner structure, said delineation region comprising a plurality of elongated patterns formed in said material layer, wherein the delineation region is asymmetric with respect to point symmetry and axial symmetry and defines an inner region of the corner structure, and wherein the delineation region comprises a plurality of angles of approximately 90° defined by at least some of the elongated patterns, wherein said inner region is filled with a predefined identification pattern comprised of a plurality of parallel lines, wherein the orientations of the parallel lines of the predefined identification patterns of corner structures formed in two subsequent material layers differ from each other.
Dependencies are inferred from the claim text.