Low stress thermal and electrical interconnects for heterojunction bipolar transistors
AssigneeAnadigics, Inc.
InventorBurhan Bayraktaroglu
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Abstract
A thermal and electrical interconnect for heterojunction bipolar transistors is disclosed wherein the interconnect is essentially comprised of gold and in thermal and electrical contact with each of the interdigitated emitter fingers and is capable of transporting heat fluxes between 0.25-1.5 mW/μm2. The interconnect is electrodeposited to form a low-stress interface with the emitter finger, thereby increasing the lifetime and reliability of the transistor.
Claims17
An interconnect for a heterojunction bipolar transistor having interdigitated emitter and base fingers wherein the interconnect is essentially comprised of gold having a thickness greater than 1 micrometers, the interconnect in thermal and electrical contact with at least two of the emitter fingers and forming a bridge over each of the base fingers thereby maintaining electrical insulation between the base and emitter with a low emitter-base capacitance, wherein the interconnect is electrodeposited such that residual stress in the interconnect is low, wherein the bridge is an air bridge.
An interconnect for a heterojunction bipolar transistor having at least two emitter fingers, the interconnect comprising:
- a first air bridge in thermal and electrical contact with at least two emitter fingers, wherein the first air bridge is electrodeposited to a thickness greater than 1 micrometers;
- and a second air bridge in thermal and electrical contact with each of the emitter fingers and a lead pad.
Dependencies are inferred from the claim text.