High breakdown voltage transistor and method
AssigneeTexas Instruments Incorporated
InventorsLeland Swanson, Gregory E. Howard
Life of this patent
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Abstract
An integrated circuit that includes a high breakdown voltage bipolar transistor. The bipolar transistor includes an emitter 36, a base 32, and a collector structure. The emitter 36 is adjacent to and overlies the base 32 and the base 32 is adjacent to and overlies a core portion 48 of the collector structure. The collector structure includes, in addition to the core portion 48, a collector contact region 31 and a lateral collector region 50 between the core portion 48 and the collector contact region 31. The lateral collector region 50 is thinner than said collector contact region at some point along its length.
Claims17
An integrated circuit, comprising a bipolar transistor, said bipolar transistor comprising:
- an emitter;
- a base;
- and
- a collector structure, wherein said emitter is adjacent to and overlies said base and said base is adjacent to and overlies a core portion of said collector structure;
- a buried insulator layer, wherein said collector structure is adjacent to and overlies said buried insulator layer;
- said collector structure comprising, in addition to said core portion, a collector contact region and a lateral collector region between said core portion and said collector contact region, wherein said lateral collector region is thinner than said collector contact region at some point along its length.
An integrated circuit, comprising a bipolar transistor, said bipolar transistor comprising:
- a collector structure overlying a buried insulator layer, said collector structure comprising a first layer adjacent to said buried insulator layer that includes a central lightly doped region and a peripheral heavily doped region;
- said collector structure further comprising a second layer overlying said central lightly doped region of said first layer;
- said collector structure further characterized by a trench in said central lightly doped region at a point between said peripheral heavily doped region and a point where said second layer overlies said first layer;
- a base structure adjacent to and overlying said second layer in said collector structure;
- and
- an emitter structure adjacent to and overlying said base structure.
An integrated circuit, comprising a bipolar transistor, said bipolar transistor comprising:
- an emitter;
- a base;
- and
- a collector structure, wherein said emitter is adjacent to and overlies said base and said base is adjacent to and overlies a core portion of said collector structure;
- said collector structure comprising, in addition to said core portion, a collector contact region and a lateral collector region between said core portion and said collector contact region, wherein said lateral collector region is non-uniform in thickness.
Dependencies are inferred from the claim text.