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US 6,724,027 B2Granted
Magnetic shielding for MRAM devices
AssigneeHewlett-Packard Development Company, L.P.
InventorsManoj K. Bhattacharyya, Darrel Bloomquist, Anthony Peter Holden, Sarah Morris Brandenberger
Life of this patent
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Abstract
A magnetic random access memory module includes a magnetic memory array. A permeable metal layer extends over a first side of the magnetic memory array. An electrically insulating layer is disposed between the permeable metal layer and the magnetic memory array.
Claims13
A magnetic random access memory module comprising:
- a magnetic memory array;
- a permeable metal layer extending over a first side of the magnetic memory array;
- and
- an electrically insulating layer disposed between the magnetic memory array and the permeable metal layer.
1 more element
A magnetic random access memory module comprising:
- a plurality of magnetic memory cells;
- a plurality of write conductors, each of the write conductors positioned adjacent an associated one of the plurality of magnetic memory cells;
- an isotropic magnetically permeable metal layer extending continuously over at least one side of the magnetic memory cells and associated write conductors, an
- an electrically insulating layer disposed between the permeable metal layer and the write conductors.
1 more element
Dependencies are inferred from the claim text.