Semiconductor device and power amplifier using the same
AssigneeRenesas Technology Corp.
InventorsHiroyuki Takazawa, Tohru Oka, Isao Ohbu, Yoshinori Imamura
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Abstract
A semiconductor device comprising a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which is formed on the surface of the guard ring of the emitter layer, wherein the protective insulating film has a density of oxygen of less than 7×1022 cm−3. This semiconductor device prevents performance deterioration and ensures high performance in a power amplifier.
Claims6
A semiconductor device comprising a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which is formed on a surface of a guard ring of the emitter layer such that a reverse current between the emitter layer and a base is substantially 10−3 A/cm2.
A power amplifier comprising a plurality of semiconductor devices on input and output sides, wherein at least one of the semiconductor devices located nearest to the output side is a semiconductor device comprising a bipolar transistor, said bipolar transistor has an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which is formed on a surface of a guard ring of the emitter layer, wherein a reverse current between the emitter and the base is 10−3 A/cm2 or more and less than 10−3 A/cm2.
Dependencies are inferred from the claim text.